Diluted II-VI oxide semiconductors with multiple band gaps.

Spin order manipulations in nanostructures of II-VI ferromagnetic semiconductors

Present spintronic research [1,2,3] involves virtually all materials families but ferromagnetic semiconductors are particularly attractive as they combine resources of both semiconductors and ferromagnets. We describe here recent studies of ferromagnetic Crand Mn-based II-VI diluted magnetic semiconductors (DMS) excluding, however, oxides that are subject of another presentation [4]. Properties...

Tunneling in Iv-vi Compounds

Metal-insulator-IV-VI compound semiconductor tunnel junctions were formed for both single and polycrystalline semiconductor material. I-V and conductance characteristics were taken as a function of temperature, and magnetic field. The experimental results were interpreted in terms of a conventional tunneling theory, and yielded information on Fermi energies, band gaps, temperature dependence of...

Magneto-optical studies of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures

Electronic materials with a wide band gap: recent developments

The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a te...

Nitrogen and hydrogen in bulk single-crystal ZnO

Zinc oxide (ZnO) is a wide band gap II–VI semiconductor with optical, electronic, and mechanical applications. Nitrogen is a promising acceptor dopant. Nitrogen–hydrogen (N–H) complexes were introduced into ZnO during chemical vapor transport (CVT) growth, using ammonia as a doping source. The N–H bond-stretching mode gives rise to an infrared (IR) absorption peak at 3151 cm 1 at liquidhelium t...